English
Karnataka Board PUCPUC Science Class 11

When the Base Current in a Transistor is Changed from 30µA to 80µA, the Collector Current is Changed from 1.0 Ma to 3.5 Ma. Find the Current Gain β.

Advertisements
Advertisements

Question

When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.

Short/Brief Note
Advertisements

Solution

Given:
Change in the base current, \[\delta I_b  = (80 - 30)  \mu \text{A}\]

Change in the collector current, \[\delta I_c  = (3 . 5 - 1)  \] mA

Base current gain = Rate of change of collector current with respect to base current
Thus,

\[\beta = \left( \frac{\delta l_c}{\delta l_b} \right)  \text{at  constant   V}_{cc} \] 

\[ \Rightarrow \beta = \frac{2 . 5 \times {10}^{- 3}}{50 \times {10}^{- 6}}\] 

\[ \Rightarrow \beta = \frac{250}{50} = 50\]

shaalaa.com
  Is there an error in this question or solution?
Chapter 45: Semiconductors and Semiconductor Devices - Exercises [Page 420]

APPEARS IN

HC Verma Concepts of Physics Volume 1 and 2 [English]
Chapter 45 Semiconductors and Semiconductor Devices
Exercises | Q 31 | Page 420

RELATED QUESTIONS

A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


The diffusion current in a p-n junction is


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


The depletion layer in the p-n junction diode is caused by ______.


Zener breakdown occurs in a p-n junction having p and n both:


In p-n junction diode ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×