Advertisements
Advertisements
Question
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Advertisements
Solution
Given:
Base current gain, \[\beta = 50\]
Change in base current, \[\delta I_b = 50 \mu A\]
Load resistance, \[R_L\] = 2 kΩ
Input resistance, \[R_i\] = 0.50 kΩ
(a) The change in output voltage is given by
\[V_0 = I_c \times R_L \]
\[ \because I_c = \beta \times I_b \]
\[ \therefore V_0 = \beta \times I_b \times R_L \]
\[ \Rightarrow V_0 = 50 \times 50 \mu A \times 2 k\Omega\]
\[ \Rightarrow V_0 = 5 V\]
(b) The change in input voltage is given by
\[\delta V_i = \delta l_b \times R_i \]
\[ \Rightarrow \delta V_i = 50 \times {10}^{- 6} \times 5 \times {10}^2 \]
\[ \Rightarrow \delta V_i = 25 \times {10}^{- 3} \]
\[ \Rightarrow \delta V_i = 25 \text{ mV}\]
(c) Power gain is given by
\[\beta^2 \times \frac{R_L}{R_i}\]
\[ \Rightarrow 2500 \times \frac{2}{0 . 5}\]
\[ \Rightarrow 2500 \times \frac{20}{5} = {10}^4\]
APPEARS IN
RELATED QUESTIONS
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The formation of the depletion region in a p-n junction diode is due to ______.
