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प्रश्न
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
पर्याय
both increases.
both decreases.
copper increases and silicon decreases.
copper decreases and silicon increases.
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उत्तर
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of copper decreases and silicon increases.
Explanation:
The resistance of copper wire increases with temperature, which causes a drop in conductivity, while the resistance of silicon wire reduces with temperature, which causes an increase in conductivity.
संबंधित प्रश्न
Distinguish between 'intrinsic' and 'extrinsic' semiconductors
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In n-type semiconductor majority carriers and minority carriers are respectively ______.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
