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प्रश्न
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
पर्याय
both increases.
both decreases.
copper increases and silicon decreases.
copper decreases and silicon increases.
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उत्तर
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of copper decreases and silicon increases.
Explanation:
The resistance of copper wire increases with temperature, which causes a drop in conductivity, while the resistance of silicon wire reduces with temperature, which causes an increase in conductivity.
संबंधित प्रश्न
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
The electron and hole concentration in a semiconductor in thermal equilibrium is given by ______.
Explain the following term:
Extrinsic semiconductor
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
The majority charge carriers in a P-type semiconductor are ______.
