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प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
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उत्तर
When a pure Germanium is doped with a trivalent impurity, the p-type extrinsic semiconductor is formed.
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संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
In a p-type semiconductor, the acceptor impurity produces an energy level ______
In n-type semiconductor, the fifth electron ______.
In p-type semiconductor, ______.
State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
