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प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
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उत्तर
When a pure Germanium is doped with a trivalent impurity, the p-type extrinsic semiconductor is formed.
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संबंधित प्रश्न
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In p-type semiconductor, the dopant is ______.
Explain the following term:
Extrinsic semiconductor
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
