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प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
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उत्तर
When a pure Germanium is doped with a trivalent impurity, the p-type extrinsic semiconductor is formed.
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संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
In a p-type semiconductor, the acceptor impurity produces an energy level ______
In n-type semiconductor, the fifth electron ______.
In p-type semiconductor, the dopant is ______.
State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.
Explain the following term:
Extrinsic semiconductor
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
The majority charge carriers in a P-type semiconductor are ______.
