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प्रश्न
In a p-type semiconductos, which of the following statement is true:
विकल्प
Electrons are majority carriers and trivalent atoms are the dopants.
Electrons are minority carriers and pentavalent atoms are the dopants.
Holes are minority carriers and pentavalent atoms are the dopants.
Holes are majority carriers and trivalent atoms are the dopants.
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उत्तर
Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
In a p-type semiconductor, the holes are the majority carriers, while the electrons are the minority carriers. A p-type semiconductor is obtained when trivalent atoms, such as aluminium, are doped in silicon atoms.
संबंधित प्रश्न
Distinguish between 'intrinsic' and 'extrinsic' semiconductors
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
In a p-type semiconductor, the acceptor impurity produces an energy level ______
A donor impurity results in ______.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In n-type semiconductor, the fifth electron ______.
In p-type semiconductor, the dopant is ______.
The electron and hole concentration in a semiconductor in thermal equilibrium is given by ______.
State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.
Explain the following term:
Extrinsic semiconductor
Distinguish between n-type and p-type semiconductors.
The conductivity of a semiconductor increases with increase in temperature because ______.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
