Advertisements
Advertisements
प्रश्न
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
विकल्प
If both Assertion and Reason are true and Reason is the correct explanation of Assertion.
If both Assertion and Reason are true but Reason is not the correct explanation of Assertion.
If Assertion is true but Reason is false.
If both Assertion and Reason are false.
Advertisements
उत्तर
If both Assertion and Reason are true and Reason is the correct explanation of Assertion.
Explanation:
A pn junction cannot be formed by physically contacting a p-type semiconductor slab with an n-type semiconductor slab. The roughness upon contact does not match the inter-atomic crystal spacing of about 2-3 Å, resulting in a discontinuity. As a result, a continuous flow of charge carriers is impossible. So both the statement and the reason are correct, and the reason explains the assertion.
APPEARS IN
संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
In n-type semiconductor, the fifth electron ______.
Explain the following term:
Extrinsic semiconductor
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer

Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
The majority charge carriers in a P-type semiconductor are ______.
