Advertisements
Advertisements
Question
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
Options
If both Assertion and Reason are true and Reason is the correct explanation of Assertion.
If both Assertion and Reason are true but Reason is not the correct explanation of Assertion.
If Assertion is true but Reason is false.
If both Assertion and Reason are false.
Advertisements
Solution
If both Assertion and Reason are true and Reason is the correct explanation of Assertion.
Explanation:
A pn junction cannot be formed by physically contacting a p-type semiconductor slab with an n-type semiconductor slab. The roughness upon contact does not match the inter-atomic crystal spacing of about 2-3 Å, resulting in a discontinuity. As a result, a continuous flow of charge carriers is impossible. So both the statement and the reason are correct, and the reason explains the assertion.
APPEARS IN
RELATED QUESTIONS
In n-type semiconductor majority carriers and minority carriers are respectively ______.
In p-type semiconductor, ______.
State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.
Explain the following term:
Extrinsic semiconductor
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
What should the addition of a dopant not disturb?
To which group of the periodic table do silicon and germanium belong?
What is the valency of silicon and germanium?
From which neighbouring groups of the periodic table are dopants for silicon and germanium chosen?
What are the two types of extrinsic semiconductors?
