Advertisements
Advertisements
Question
The conductivity of a semiconductor increases with increase in temperature because ______.
Options
number density of free current carriers increases.
relaxation time increases.
both number density of carriers and relaxation time increase.
number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density.
Advertisements
Solution
The conductivity of a semiconductor increases with increase in temperature because number density of current carriers increases, relaxation time decreases but effect of decrease in relaxation time is much less than increase in number density.
Explanation:
The conductivity of Semiconductor:
(1) In intrinsic semiconductors ne = nh. Both electrons and holes contribute to current conduction.

(2) When some potential difference is applied across a piece of intrinsic semiconductor current flows in it due to both electrons and holes, i.e. `i = i_e + i_h` ⇒ `eA[n_ev_e + n_hv_h]`
(3) As we know `σ = J/E = i/(AE)`. Hence conductivity of semiconductor is `σ = e[n_eu_e + n_hu_h]`; where `v_e` = drift velocity of electron, `v_h` = drift velocity of holes, E = Applied electric field, `mu_e = v_e/E` = mobility of electron and `mu_h = v_h/E` = mobility of holes.
(4) Motion of electrons in the conduction band and of holes in the valence band under the action of electric field is shown below:

(5) At absolute zero temperature (0 K) conduction band of the semiconductor is completely empty, i.e., σ > 0. Hence the semiconductor behaves as an insulator.
We know that `σ = (n e^2τ)/m`,
So, `σ ∝ nτ`
Where n = number density and τ = relaxation time
In semiconductors, conductivity increases with increase in temperature, because the number density of current carries increases, relaxation time decreases but effect of decrease in relaxation is much less than increase in number density.
APPEARS IN
RELATED QUESTIONS
In a p-type semiconductos, which of the following statement is true:
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
A donor impurity results in ______.
In n-type semiconductor, the fifth electron ______.
Explain the following term:
Extrinsic semiconductor
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
The majority charge carriers in a P-type semiconductor are ______.
What should the addition of a dopant not disturb?
What is the valency of silicon and germanium?
From which neighbouring groups of the periodic table are dopants for silicon and germanium chosen?
Which type of dopant is antimony (Sb)?
Why are different impurities added to semiconductors?
