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प्रश्न
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
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उत्तर
The size of dopant atoms should be such as not to distort the pure semiconductor lattice structure and yet easily contribute a charge carrier on forming covalent bonds with Si or Ge.
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संबंधित प्रश्न
In a p-type semiconductos, which of the following statement is true:
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
A donor impurity results in ______.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In n-type semiconductor majority carriers and minority carriers are respectively ______.
The electron and hole concentration in a semiconductor in thermal equilibrium is given by ______.
The conductivity of a semiconductor increases with increase in temperature because ______.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
What is the process of adding a suitable impurity to increase a semiconductor's electrical conductivity called?
What is a doped semiconductor called?
What is the semiconductor to which the dopant is added called?
To which group of the periodic table do silicon and germanium belong?
What is the valency of silicon and germanium?
Why are different impurities added to semiconductors?
