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प्रश्न
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
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उत्तर
The size of dopant atoms should be such as not to distort the pure semiconductor lattice structure and yet easily contribute a charge carrier on forming covalent bonds with Si or Ge.
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संबंधित प्रश्न
Distinguish between 'intrinsic' and 'extrinsic' semiconductors
In a p-type semiconductos, which of the following statement is true:
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
A donor impurity results in ______.
In n-type semiconductor majority carriers and minority carriers are respectively ______.
In p-type semiconductor, the dopant is ______.
Explain the following term:
Extrinsic semiconductor
Distinguish between n-type and p-type semiconductors.
The conductivity of a semiconductor increases with increase in temperature because ______.
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
The majority charge carriers in a P-type semiconductor are ______.
