Advertisements
Advertisements
प्रश्न
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
Advertisements
उत्तर
The size of dopant atoms should be such as not to distort the pure semiconductor lattice structure and yet easily contribute a charge carrier on forming covalent bonds with Si or Ge.
APPEARS IN
संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
In n-type semiconductor, the fifth electron ______.
In p-type semiconductor, the dopant is ______.
In p-type semiconductor, ______.
Explain the following term:
Extrinsic semiconductor
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
The conductivity of a semiconductor increases with increase in temperature because ______.
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
