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Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV? - Physics

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प्रश्न

Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?

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उत्तर

The size of dopant atoms should be such as not to distort the pure semiconductor lattice structure and yet easily contribute a charge carrier on forming covalent bonds with Si or Ge.

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पाठ 14: Semiconductor Electronics - Exercises [पृष्ठ ९१]

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एनसीईआरटी एक्झांप्लर Physics [English] Class 12
पाठ 14 Semiconductor Electronics
Exercises | Q 14.17 | पृष्ठ ९१

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संबंधित प्रश्‍न

Distinguish between 'intrinsic' and 'extrinsic' semiconductors


In a p-type semiconductor, the acceptor impurity produces an energy level ______


Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.


A donor impurity results in ______.


Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.


When p-n junction diode is forward biased, then ______.


In n-type semiconductor majority carriers and minority carriers are respectively ______.


In p-type semiconductor, the dopant is ______.


State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.


Explain the following term:

Extrinsic semiconductor


Distinguish between n-type and p-type semiconductors.


The conductivity of a semiconductor increases with increase in temperature because ______.


Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?


Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.


The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer


What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?


The majority charge carriers in a P-type semiconductor are ______.


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