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कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान 2nd PUC Class 12

The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium.

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प्रश्न

The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?

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उत्तर

Number of silicon atoms, N = 5 × 1028 atoms/m3

Number of arsenic atoms, nAs = 5 × 1022 atoms/m3

Number of indium atoms, nIn = 5 × 1020 atoms/m3

Number of thermally-generated electrons, ni = 1.5 × 1016 electrons/m3

Number of electrons, ne = 5 × 1022 − 1.5 × 1016 ≈ 4.99 × 1022

Number of holes = nh

In thermal equilibrium, the concentrations of electrons and holes in a semiconductor are related as:

nenh = ni2

`therefore "n"_"h" = ("n"_"i"^2)/"n"_"e"`

`= (1.5 xx 10^16)^2/(4.99 xx 10^22) ~~ 4.51 xx 10^9`

Therefore, the number of electrons is approximately 4.99 × 1022 and the number of holes is about 4.51 × 109. Since the number of electrons is more than the number of holes, the material is an n-type semiconductor.

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पाठ 14: Semiconductor Electronics: Materials, Devices and Simple Circuits - Exercise [पृष्ठ ५१०]

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एनसीईआरटी Physics Part I and II [English] Class 12
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Exercise | Q 12 | पृष्ठ ५१०
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In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.


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