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प्रश्न
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
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उत्तर
To keep the reading of ammeter constant value of R should be increased as with the increase in temperature of a semiconductor, its resistance decreases and current tends to increase.
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संबंधित प्रश्न
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
In n-type semiconductor, the fifth electron ______.
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Distinguish between n-type and p-type semiconductors.
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
