Advertisements
Advertisements
प्रश्न
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
पर्याय
1.8 × 109 m-3
2.4 × 1010 m-3
3.6 × 109 m-3
3.2 × 1010 m-3
Advertisements
उत्तर
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is 3.6 × 109 m-3.
Explanation:
We know that,
Number of density of electrons = `(n_i^2)/(n_h)`
Where, ni is density of intrinsic carrier, nh is the density of holes.
Given:
`n_i = 1.2 xx 10^15` m-3
`n_h = 4 xx 10^20` m-3
`n_e = (n_i^2)/(n_h)`
`n_e = (1.2 xx 10^15)^2/(4 xx 10^20)`
`n_e = 3.6 xx 10^9` m-3
APPEARS IN
संबंधित प्रश्न
In a p-type semiconductor, the acceptor impurity produces an energy level ______
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
A donor impurity results in ______.
In p-type semiconductor, ______.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
