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प्रश्न
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
पर्याय
1.8 × 109 m-3
2.4 × 1010 m-3
3.6 × 109 m-3
3.2 × 1010 m-3
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उत्तर
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is 3.6 × 109 m-3.
Explanation:
We know that,
Number of density of electrons = `(n_i^2)/(n_h)`
Where, ni is density of intrinsic carrier, nh is the density of holes.
Given:
`n_i = 1.2 xx 10^15` m-3
`n_h = 4 xx 10^20` m-3
`n_e = (n_i^2)/(n_h)`
`n_e = (1.2 xx 10^15)^2/(4 xx 10^20)`
`n_e = 3.6 xx 10^9` m-3
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संबंधित प्रश्न
In a p-type semiconductos, which of the following statement is true:
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In p-type semiconductor, the dopant is ______.
Explain the following term:
Extrinsic semiconductor
The conductivity of a semiconductor increases with increase in temperature because ______.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
To which group of the periodic table do silicon and germanium belong?
From which neighbouring groups of the periodic table are dopants for silicon and germanium chosen?
Which type of dopant is antimony (Sb)?
