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Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why? - Physics

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प्रश्न

Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?

टीपा लिहा
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उत्तर

The conduction level of any element depends on the energy gap between its conduction band and valence band.

In conductors, there is no energy gap between the conduction band and valence band. For insulators, the energy gap is large and for semiconductors the energy gap is moderate.

The energy gap for Sn is 0 eV, for C is 5.4 eV, for Si is 1.1 eV and for Ge is 0.7 eV related to their atomic size.

Therefore Sn is a conductor, C is an insulator, and Ge and Si are semiconductors.

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पाठ 14: Semiconductor Electronics - Exercises [पृष्ठ ९१]

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एनसीईआरटी एक्झांप्लर Physics [English] Class 12
पाठ 14 Semiconductor Electronics
Exercises | Q 14.18 | पृष्ठ ९१

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संबंधित प्रश्‍न

Distinguish between 'intrinsic' and 'extrinsic' semiconductors


In a p-type semiconductos, which of the following statement is true:


The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?


Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).


In a p-type semiconductor, the acceptor impurity produces an energy level ______


A donor impurity results in ______.


Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.


In p-type semiconductor, the dopant is ______.


In p-type semiconductor, ______.


State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.


Explain the following term:

Extrinsic semiconductor


Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.


Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.


Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.


  • Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
  • Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.

What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?


The majority charge carriers in a P-type semiconductor are ______.


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