Advertisements
Advertisements
प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Advertisements
उत्तर
When a pure Germanium is doped with a pentavalent impurity, n-type extrinsic semiconductor is formed.
APPEARS IN
संबंधित प्रश्न
Distinguish between 'intrinsic' and 'extrinsic' semiconductors
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
In n-type semiconductor, the fifth electron ______.
In p-type semiconductor, the dopant is ______.
In p-type semiconductor, ______.
The electron and hole concentration in a semiconductor in thermal equilibrium is given by ______.
Explain the following term:
Extrinsic semiconductor
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
