Advertisements
Advertisements
प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Advertisements
उत्तर
When a pure Germanium is doped with a pentavalent impurity, n-type extrinsic semiconductor is formed.
APPEARS IN
संबंधित प्रश्न
In a p-type semiconductor, the acceptor impurity produces an energy level ______
A donor impurity results in ______.
In p-type semiconductor, ______.
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
The majority charge carriers in a P-type semiconductor are ______.
