Advertisements
Advertisements
प्रश्न
Name the extrinsic semiconductors formed when pure germanium is doped with a Pentavalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Advertisements
उत्तर
When a pure Germanium is doped with a pentavalent impurity, n-type extrinsic semiconductor is formed.
APPEARS IN
संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
In n-type semiconductor majority carriers and minority carriers are respectively ______.
The electron and hole concentration in a semiconductor in thermal equilibrium is given by ______.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
