Advertisements
Advertisements
प्रश्न
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
Advertisements
उत्तर
We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.
On average the potential barrier in the P-N junction is ~0.5 V.
APPEARS IN
संबंधित प्रश्न
When a forward bias is applied to a p-n junction, it ______.
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
Of the diodes shown in the following diagrams, which one is reverse biased?
In forward bias width of potential barrier in a p + n junction diode
The expected energy of the electron at absolute zero is called:-
In a semiconductor diode, the barrier potential offers opposition to only
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer
| ‘A’ | ‘B’ | ‘C’ |
 |
 |
 |
A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.
Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.
Choose the correct circuit which can achieve the bridge balance.
