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कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान 2nd PUC Class 12

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

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प्रश्न

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

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उत्तर

We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.

On average the potential barrier in the P-N junction is ~0.5 V.

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पाठ 14: Semiconductor Electronics - Exercises [पृष्ठ ९१]

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एनसीईआरटी एक्झांप्लर Physics Exemplar [English] Class 12
पाठ 14 Semiconductor Electronics
Exercises | Q 14.19 | पृष्ठ ९१

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संबंधित प्रश्‍न

When a forward bias is applied to a p-n junction, it ______.


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Draw its I – V characteristics of photodiode


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


Why is a zener diode considered as a special purpose semiconductor diode?


The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


With reference to Semiconductor Physics,

Name the diode that emits spontaneous radiation when forward biased.


What are the applications of p - n Junction diode?


The drift current in a p-n junction is from the ______.


In forward bias width of potential barrier in a p + n junction diode


Use a transistor as an amplition


In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.


Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.

  1. large velocity of the minority charge carriers if the doping concentration is small.
  2. large velocity of the minority charge carriers if the doping concentration is large.
  3. strong electric field in a depletion region if the doping concentration is small.
  4. strong electric field in the depletion region if the doping concentration is large.

Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.


Choose the correct circuit which can achieve the bridge balance.


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