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Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction? - Physics

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प्रश्न

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

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उत्तर

We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.

On average the potential barrier in the P-N junction is ~0.5 V.

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पाठ 14: Semiconductor Electronics - Exercises [पृष्ठ ९१]

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एनसीईआरटी एक्झांप्लर Physics [English] Class 12
पाठ 14 Semiconductor Electronics
Exercises | Q 14.19 | पृष्ठ ९१

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संबंधित प्रश्‍न

In the following diagram 'S' is a semiconductor. Would you increase or decrease the value of R to keep the reading of the ammeter A constant when S is heated? Give reason for your answer.


Draw its I – V characteristics of photodiode


With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.


With reference to semi-conductors answer the following : 

(i) What is the change in the resistance of the semi-conductor with increase in temperature ?

(ii) Name the majority charge carriers in n-type semi-conductor.

(iii) What is meant by doping ?


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


With reference to Semiconductor Physics,

Name the diode that emits spontaneous radiation when forward biased.


Depletion layer in p - n junction diode consists of


In forward bias width of potential barrier in a p + n junction diode


In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.


When an electric field is applied across a semiconductor ______.

  1. electrons move from lower energy level to higher energy level in the conduction band.
  2. electrons move from higher energy level to lower energy level in the conduction band.
  3. holes in the valence band move from higher energy level to lower energy level.
  4. holes in the valence band move from lower energy level to higher energy level.

Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.


The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.

  1. large velocity of the minority charge carriers if the doping concentration is small.
  2. large velocity of the minority charge carriers if the doping concentration is large.
  3. strong electric field in a depletion region if the doping concentration is small.
  4. strong electric field in the depletion region if the doping concentration is large.

Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


Draw V-I characteristics of a p-n Junction diode.


A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


An ideal PN junction diode offers ______.


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