मराठी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

A Plate Current of 10 Ma is Obtained When 60 Volts Are Applied Across a Diode Tube. - Physics

Advertisements
Advertisements

प्रश्न

A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.

बेरीज
Advertisements

उत्तर

According to Lamgmuir-Child Law,
the relation between plate current (ip) and the plate voltage (Vp) is given by

\[i_p  = C {V_p}^{3/2}  ............(1)\]

Differentiating equation (1) with respect Vp, we get:-

\[\frac{d i_p}{d V_p} = \frac{3}{2}C {V_p}^{1/2} ............(2)\]

Dividing (2) and (1), we get:-

\[\frac{1}{i_p}\frac{d i_p}{d v_p} = \frac{3/2C {V_p}^{1/2}}{C {V_p}^{3/2}}\]

\[ \Rightarrow \frac{1}{i_p} . \frac{d i_p}{d v_p} = \frac{3}{2 V_p}\]

The dynamic resistance is given by:-

\[\frac{d v_p}{d i_p} = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 \times 60}{3 \times 10 \times {10}^{- 3}}\]

\[ r_p  = 4 \times  {10}^3  = 4  k\Omega\]

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 19: Electric Current through Gases - Exercises [पृष्ठ ३५३]

APPEARS IN

एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
पाठ 19 Electric Current through Gases
Exercises | Q 10 | पृष्ठ ३५३

संबंधित प्रश्‍न

What causes the setting up of high electric field even for small reverse bias voltage across the diode?


Plot a graph showing variation of current versus voltage for the material GaAs ?


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?


The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.


The drift current in a p-n junction is from the ______.


The expected energy of the electron at absolute zero is called:-


Avalanche breakdown is due to ______.


In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.

The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.

  1. large velocity of the minority charge carriers if the doping concentration is small.
  2. large velocity of the minority charge carriers if the doping concentration is large.
  3. strong electric field in a depletion region if the doping concentration is small.
  4. strong electric field in the depletion region if the doping concentration is large.

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?


If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?


Draw V-I characteristics of a p-n Junction diode.


Explain the formation of the barrier potential in a p-n junction.


What is meant by forward biasing of a semiconductor diode?


An ideal PN junction diode offers ______.


A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×