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A Plate Current of 10 Ma is Obtained When 60 Volts Are Applied Across a Diode Tube.

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प्रश्न

A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.

बेरीज
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उत्तर

According to Lamgmuir-Child Law,
the relation between plate current (ip) and the plate voltage (Vp) is given by

\[i_p  = C {V_p}^{3/2}  ............(1)\]

Differentiating equation (1) with respect Vp, we get:-

\[\frac{d i_p}{d V_p} = \frac{3}{2}C {V_p}^{1/2} ............(2)\]

Dividing (2) and (1), we get:-

\[\frac{1}{i_p}\frac{d i_p}{d v_p} = \frac{3/2C {V_p}^{1/2}}{C {V_p}^{3/2}}\]

\[ \Rightarrow \frac{1}{i_p} . \frac{d i_p}{d v_p} = \frac{3}{2 V_p}\]

The dynamic resistance is given by:-

\[\frac{d v_p}{d i_p} = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 \times 60}{3 \times 10 \times {10}^{- 3}}\]

\[ r_p  = 4 \times  {10}^3  = 4  k\Omega\]

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पाठ 41: Electric Current through Gases - Exercises [पृष्ठ ३५३]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 41 Electric Current through Gases
Exercises | Q 10 | पृष्ठ ३५३

संबंधित प्रश्‍न

(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.


What happens when a forward bias is applied to a p-n junction?


In the following diagram, is the junction diode forward biased or reverse biased ?


Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.


The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.


Why is a zener diode considered as a special purpose semiconductor diode?


The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.


The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.


The current through an ideal PN-junction shown in the following circuit diagram will be:


The drift current in a p-n junction is from the ______.


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


When an electric field is applied across a semiconductor ______.

  1. electrons move from lower energy level to higher energy level in the conduction band.
  2. electrons move from higher energy level to lower energy level in the conduction band.
  3. holes in the valence band move from higher energy level to lower energy level.
  4. holes in the valence band move from lower energy level to higher energy level.

Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer

‘A’ ‘B’ ‘C’

Describe the following term briefly: 

Minority carrier injection in forward biasing.


Read the following paragraph and answer the questions that follow.

A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current.
  1. In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

    (a) 40 mA
    (b) 20 mA
    (c) 35 mA
    (d) 30 mA
  2. In which of the following figures, the pn diode is reverse biased?
    (a)

    (b)

    (c)

    (d)
  3. Based on the V-I characteristics of the diode, we can classify the diode as:
    (a) bilateral device
    (b) ohmic device
    (c) non-ohmic device
    (d) passive element
    OR
    Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

    (a) in the circuits (1) and (2)
    (b) in the circuits (2) and (3)
    (c) in the circuits (1) and (3)
    (d) only in the circuit (1)


  4. The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
    (a) 100
    (b) 106
    (c) 10
    (d) 10-6

What opposes further diffusion in the depletion layer?


What current flows in the reverse-bias V-I characteristic before breakdown?


How does effective resistance compare between forward bias after the cut-in voltage and reverse bias before breakdown?


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