English
Karnataka Board PUCPUC Science Class 11

A Plate Current of 10 Ma is Obtained When 60 Volts Are Applied Across a Diode Tube. - Physics

Advertisements
Advertisements

Question

A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.

Sum
Advertisements

Solution

According to Lamgmuir-Child Law,
the relation between plate current (ip) and the plate voltage (Vp) is given by

\[i_p  = C {V_p}^{3/2}  ............(1)\]

Differentiating equation (1) with respect Vp, we get:-

\[\frac{d i_p}{d V_p} = \frac{3}{2}C {V_p}^{1/2} ............(2)\]

Dividing (2) and (1), we get:-

\[\frac{1}{i_p}\frac{d i_p}{d v_p} = \frac{3/2C {V_p}^{1/2}}{C {V_p}^{3/2}}\]

\[ \Rightarrow \frac{1}{i_p} . \frac{d i_p}{d v_p} = \frac{3}{2 V_p}\]

The dynamic resistance is given by:-

\[\frac{d v_p}{d i_p} = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 V_p}{3 i_p}\]

\[ r_p  = \frac{2 \times 60}{3 \times 10 \times {10}^{- 3}}\]

\[ r_p  = 4 \times  {10}^3  = 4  k\Omega\]

shaalaa.com
  Is there an error in this question or solution?
Chapter 19: Electric Current through Gases - Exercises [Page 353]

APPEARS IN

HC Verma Concepts of Physics Vol. 2 [English] Class 11 and 12
Chapter 19 Electric Current through Gases
Exercises | Q 10 | Page 353

RELATED QUESTIONS

What happens when a forward bias is applied to a p-n junction?


In the following diagram 'S' is a semiconductor. Would you increase or decrease the value of R to keep the reading of the ammeter A constant when S is heated? Give reason for your answer.


Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.


The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


A – pn junction has a depletion layer of thickness .of the order of


In forward bias width of potential barrier in a p + n junction diode


In a semiconductor diode, the barrier potential offers opposition to only


In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.


Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.


In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.


(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?

Explain the formation of the barrier potential in a p-n junction.


Describe the following term briefly:

breakdown voltage in reverse biasing


With reference to a semiconductor diode, define the depletion region.


What is meant by forward biasing of a semiconductor diode?


Choose the correct circuit which can achieve the bridge balance.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×