Advertisements
Advertisements
Question
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?

Advertisements
Solution
According to the problem, forward biased resistance = 25 Ω and reverse biased resistance = ∞
As shown in the figure, the diode in branch CD is in reverse biased which has infinite resistance.
So, the current in that branch is zero, i.e. I3, = 0
Resistance in branch AB = 25 + 125 = 150 Ω say R1
Resistance in branch EF = 25 + 125 = 150 Ω, say R2
AB is parallel to EF
So, effective resistance
`1/R^' = 1/R_1 + 1/R_2 = 1/150 + 1/150 = 2/150`
⇒ R' 75 Ω
Total resistance R of the circuit = R' + 25 = 75 + 25 = 100 Ω
Current `I_1 = V/R = 5/100` = 0.05 A
According to Kirchhoff's, current law (KCL),
I1 = I4 + I2 + I3 .....(Here I3 = 0)
So I1 = I4 + I2
Here, the resistance R1 and R2 are same.
i.e., I4 = I2
∴ I1 = 2I2
⇒ `I_2 = I_1/2 = 0.05/2` = 0.025 A
And I4 = 0.025 A
Therefore, we get, I1 = 0.05 A, I2 = 0.025 A, I3 = 0 and I4 = 0.025 A.
APPEARS IN
RELATED QUESTIONS
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Draw its I – V characteristics of photodiode
The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.

A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.

A – pn junction has a depletion layer of thickness .of the order of
Use a transistor as an amplition
The expected energy of the electron at absolute zero is called:-
On increasing the reverse biases voltage to a large value in a P – N junction diode-current
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Draw V-I characteristics of a p-n Junction diode.
Explain the formation of the barrier potential in a p-n junction.
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
What is meant by forward biasing of a semiconductor diode?
An ideal PN junction diode offers ______.
