English
Karnataka Board PUCPUC Science 2nd PUC Class 12

Consider a box with three terminals on top of it as shown in figure (a): Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement.

Advertisements
Advertisements

Question

Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.

Graph
Long Answer
Advertisements

Solution

The V-I characteristics of these graphs are discussed in points:

(a) In the V-I graph of condition (i), reverse characteristics are shown in figure (c). Here A is connected to the n-side of p-n junction I and B is connected top-side of the p-n junction I with a resistance in series.

(b) In the V-I graph of condition (ii), a forward characteristic is shown in figure (d), where 0.7 V is the knee voltage of p-n junction I. 1/slope = (1/1000) Ω.

It means A is connected to the n-side of p-n junction I and B is connected to the p-side of p-n junction I and resistance R is in a series of p-n junction I between A and B.

(c) In the V-I graph of condition (iii), a forward characteristic is shown in figure (e), where 0.7 V is the knee voltage. In this case, p-side of p-n junction II is connected to C and the n-side of p-n junction II to B.

(d) In V-I graphs of conditions (iv), (v), (vi) also concludes the above connection of p-n junctions I and II along with a resistance R.

Thus, the arrangement of p-n I, p-n II and resistance R between A, B and C will be as shown in the figure.

shaalaa.com
  Is there an error in this question or solution?
Chapter 14: Semiconductor Electronics - Exercises [Page 95]

APPEARS IN

NCERT Exemplar Physics Exemplar [English] Class 12
Chapter 14 Semiconductor Electronics
Exercises | Q 14.38 | Page 95

Video TutorialsVIEW ALL [2]

RELATED QUESTIONS

With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.


Explain the working of P-N junction diode in forward and reverse biased mode.


With reference to semi-conductors answer the following : 

(i) What is the change in the resistance of the semi-conductor with increase in temperature ?

(ii) Name the majority charge carriers in n-type semi-conductor.

(iii) What is meant by doping ?


Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.


With reference to Semiconductor Physics,

Name the diode that emits spontaneous radiation when forward biased.


What are the applications of p - n Junction diode?


Of the diodes shown in the following diagrams, which one is reverse biased?


The current through an ideal PN-junction shown in the following circuit diagram will be:


A – pn junction has a depletion layer of thickness .of the order of


Depletion layer in p - n junction diode consists of


Use a transistor as an amplition


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


In a semiconductor diode, the barrier potential offers opposition to only


Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?


Differentiate between the threshold voltage and the breakdown voltage for a diode.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


With reference to a semiconductor diode, define the depletion region.


What is meant by forward biasing of a semiconductor diode?


A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×