हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान 2nd PUC Class 12

Consider a box with three terminals on top of it as shown in figure (a): Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement.

Advertisements
Advertisements

प्रश्न

Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.

आलेख
दीर्घउत्तर
Advertisements

उत्तर

The V-I characteristics of these graphs are discussed in points:

(a) In the V-I graph of condition (i), reverse characteristics are shown in figure (c). Here A is connected to the n-side of p-n junction I and B is connected top-side of the p-n junction I with a resistance in series.

(b) In the V-I graph of condition (ii), a forward characteristic is shown in figure (d), where 0.7 V is the knee voltage of p-n junction I. 1/slope = (1/1000) Ω.

It means A is connected to the n-side of p-n junction I and B is connected to the p-side of p-n junction I and resistance R is in a series of p-n junction I between A and B.

(c) In the V-I graph of condition (iii), a forward characteristic is shown in figure (e), where 0.7 V is the knee voltage. In this case, p-side of p-n junction II is connected to C and the n-side of p-n junction II to B.

(d) In V-I graphs of conditions (iv), (v), (vi) also concludes the above connection of p-n junctions I and II along with a resistance R.

Thus, the arrangement of p-n I, p-n II and resistance R between A, B and C will be as shown in the figure.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 14: Semiconductor Electronics - Exercises [पृष्ठ ९५]

APPEARS IN

एनसीईआरटी एक्झांप्लर Physics Exemplar [English] Class 12
अध्याय 14 Semiconductor Electronics
Exercises | Q 14.38 | पृष्ठ ९५

वीडियो ट्यूटोरियलVIEW ALL [2]

संबंधित प्रश्न

(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.


What happens when a forward bias is applied to a p-n junction?


In the following diagram 'S' is a semiconductor. Would you increase or decrease the value of R to keep the reading of the ammeter A constant when S is heated? Give reason for your answer.


What is the use of Zener diode?


The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?


Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.


The current through an ideal PN-junction shown in the following circuit diagram will be:


Depletion layer in p - n junction diode consists of


When we apply reverse biased to a junction diode, it


The expected energy of the electron at absolute zero is called:-


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


In a semiconductor diode, the barrier potential offers opposition to only


In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.


In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.


Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.


Read the following paragraph and answer the questions that follow.

A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current.
  1. In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

    (a) 40 mA
    (b) 20 mA
    (c) 35 mA
    (d) 30 mA
  2. In which of the following figures, the pn diode is reverse biased?
    (a)

    (b)

    (c)

    (d)
  3. Based on the V-I characteristics of the diode, we can classify the diode as:
    (a) bilateral device
    (b) ohmic device
    (c) non-ohmic device
    (d) passive element
    OR
    Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

    (a) in the circuits (1) and (2)
    (b) in the circuits (2) and (3)
    (c) in the circuits (1) and (3)
    (d) only in the circuit (1)


  4. The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
    (a) 100
    (b) 106
    (c) 10
    (d) 10-6

Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×