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कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान 2nd PUC Class 12

Consider a box with three terminals on top of it as shown in figure (a): Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. - Physics

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प्रश्न

Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.

आलेख
दीर्घउत्तर
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उत्तर

The V-I characteristics of these graphs are discussed in points:

(a) In the V-I graph of condition (i), reverse characteristics are shown in figure (c). Here A is connected to the n-side of p-n junction I and B is connected top-side of the p-n junction I with a resistance in series.

(b) In the V-I graph of condition (ii), a forward characteristic is shown in figure (d), where 0.7 V is the knee voltage of p-n junction I. 1/slope = (1/1000) Ω.

It means A is connected to the n-side of p-n junction I and B is connected to the p-side of p-n junction I and resistance R is in a series of p-n junction I between A and B.

(c) In the V-I graph of condition (iii), a forward characteristic is shown in figure (e), where 0.7 V is the knee voltage. In this case, p-side of p-n junction II is connected to C and the n-side of p-n junction II to B.

(d) In V-I graphs of conditions (iv), (v), (vi) also concludes the above connection of p-n junctions I and II along with a resistance R.

Thus, the arrangement of p-n I, p-n II and resistance R between A, B and C will be as shown in the figure.

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अध्याय 14: Semiconductor Electronics - Exercises [पृष्ठ ९५]

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एनसीईआरटी एक्झांप्लर Physics [English] Class 12
अध्याय 14 Semiconductor Electronics
Exercises | Q 14.38 | पृष्ठ ९५

वीडियो ट्यूटोरियलVIEW ALL [2]

संबंधित प्रश्न

(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.


In the following diagram, is the junction diode forward biased or reverse biased ?


Plot a graph showing variation of current versus voltage for the material GaAs ?


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.


A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


In semiconductor physics, what is meant by: 
(i) rectifier
(ii) an amplifier
(iii) an oscillator


A – pn junction has a depletion layer of thickness .of the order of


In forward bias width of potential barrier in a p + n junction diode


Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.



(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?

The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer

‘A’ ‘B’ ‘C’

Explain the formation of the barrier potential in a p-n junction.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.


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