हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

The Power Delivered in the Plate Circular of a Diode is 1.0 W When the Plate Voltage is 36 V. Find the Power Delivered If the Plate Voltage is Increased to 49 V. Assume Langmuir-child Equation to Hold

Advertisements
Advertisements

प्रश्न

The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.

योग
Advertisements

उत्तर

Given:-

When plate voltage, Vpis 36 V, power delivered in the plate circular of a diode, P, is 1.0 W.

Let the plate current be Ip.

Let the power delivered be P' and plate current be Ip' when plate voltage, Vp, is increased to 49 V

\[  P =  I_p  V_p \]

\[ \Rightarrow    I_p  = \frac{P}{V_P} = \frac{1}{36}\]

According to Langmuir-Child equation,

\[I_p    \propto   ( V_p  )^{3/2} , \]

\[ I_p '   \propto   ( V_p ' )^{3/2} , \]

\[ \Rightarrow   \frac{I_p}{I '_p} = \frac{( V_p )^{3/2}}{( V_p ' )^{3/2}}\]

\[ \Rightarrow \frac{1/36}{I_p '} =  \left( \frac{36}{49} \right)^{3/2} \]

\[ \Rightarrow    I_p  = 0 . 04411\]

Thus, power delivered when the plate voltage is increased to 49 V,

\[P' =  V_p ' \times  I_p '\]

\[P' = 49 \times 0 . 04411  W\]

\[P' = 2 . 1613  W = 2 . 2  W\]

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 41: Electric Current through Gases - Exercises [पृष्ठ ३५३]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 41 Electric Current through Gases
Exercises | Q 12 | पृष्ठ ३५३

संबंधित प्रश्न

A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.


The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.


Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.


Diffusion in a p-n junction is due to ______.


Of the diodes shown in the following diagrams, which one is reverse biased?


When we apply reverse biased to a junction diode, it


The expected energy of the electron at absolute zero is called:-


Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.


The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.

  1. large velocity of the minority charge carriers if the doping concentration is small.
  2. large velocity of the minority charge carriers if the doping concentration is large.
  3. strong electric field in a depletion region if the doping concentration is small.
  4. strong electric field in the depletion region if the doping concentration is large.


(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?

A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?


Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


Explain the formation of the barrier potential in a p-n junction.


A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.


Describe the following term briefly: 

Minority carrier injection in forward biasing.


Describe the following term briefly:

Breakdown voltage in reverse biasing


What is meant by forward biasing of a semiconductor diode?


A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.


Choose the correct circuit which can achieve the bridge balance.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×