Advertisements
Advertisements
प्रश्न
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Advertisements
उत्तर
Given:-
When plate voltage, Vp, is 36 V, power delivered in the plate circular of a diode, P, is 1.0 W.
Let the plate current be Ip.
Let the power delivered be P' and plate current be Ip' when plate voltage, Vp, is increased to 49 V
\[ P = I_p V_p \]
\[ \Rightarrow I_p = \frac{P}{V_P} = \frac{1}{36}\]
According to Langmuir-Child equation,
\[I_p \propto ( V_p )^{3/2} , \]
\[ I_p ' \propto ( V_p ' )^{3/2} , \]
\[ \Rightarrow \frac{I_p}{I '_p} = \frac{( V_p )^{3/2}}{( V_p ' )^{3/2}}\]
\[ \Rightarrow \frac{1/36}{I_p '} = \left( \frac{36}{49} \right)^{3/2} \]
\[ \Rightarrow I_p = 0 . 04411\]
Thus, power delivered when the plate voltage is increased to 49 V,
\[P' = V_p ' \times I_p '\]
\[P' = 49 \times 0 . 04411 W\]
\[P' = 2 . 1613 W = 2 . 2 W\]
APPEARS IN
संबंधित प्रश्न
In the following diagram, is the junction diode forward biased or reverse biased ?
What is the use of Zener diode?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.
With reference to a semiconductor diode, what is meant by:
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region
The drift current in a p-n junction is from the ______.
A – pn junction has a depletion layer of thickness .of the order of
When we apply reverse biased to a junction diode, it
The expected energy of the electron at absolute zero is called:-
Avalanche breakdown is due to ______.
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
 (a) |
 (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
Differentiate between the threshold voltage and the breakdown voltage for a diode.
