Advertisements
Advertisements
प्रश्न
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Advertisements
उत्तर
A device which converts A.C. to D.C. is called rectifier. In this case output exists only for half cycle hence it is called half wave rectifier. Construction: The circuit diagram of a half wave rectifier using a junctiondiode is as shown in fig. The alternating voltage source is connected to the primary coil of a transformer. The secondary coil is connected to the diode in series with a resistance RL called the load resistance


T=Transformer
D=Diode
V0=output voltage
v1=input votage
RL=load resistance
Working: In first cycle of input voltage, the anode of the diode is positive potential w.r.t. cathode. Hence the diode is in forward-biased. Hence it conduct current. The current flows through load resistance giving voltage drop iRL. This voltage drop is called output voltage. During next half cycle the anode of diode is in negative potential w.r.t. Hence it is in reversed-biased. Hence it does not conduct the current. Hence current does not flow through load resistance giving no P.D. across it. Hence output voltage is unidirectional. It is called as D.C.
APPEARS IN
संबंधित प्रश्न
Explain the working of P-N junction diode in forward and reverse biased mode.
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
When a forward bias is applied to a p-n junction, it ______.
In the following diagram, is the junction diode forward biased or reverse biased ?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
What are the applications of p - n Junction diode?
When we apply reverse biased to a junction diode, it
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In forward bias width of potential barrier in a p + n junction diode
Use a transistor as an amplition
The expected energy of the electron at absolute zero is called:-
In a semiconductor diode, the barrier potential offers opposition to only
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.

In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.

When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Read the following paragraph and answer the questions that follow.
| A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current. |
- In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

(a) 40 mA
(b) 20 mA
(c) 35 mA
(d) 30 mA - In which of the following figures, the pn diode is reverse biased?
(a)
(b)
(c)
(d)
- Based on the V-I characteristics of the diode, we can classify the diode as:
(a) bilateral device
(b) ohmic device
(c) non-ohmic device
(d) passive element
OR
Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:
(a) in the circuits (1) and (2)


(b) in the circuits (2) and (3)
(c) in the circuits (1) and (3)
(d) only in the circuit (1) 
The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
(a) 100
(b) 106
(c) 10
(d) 10-6
With reference to a semiconductor diode, define the depletion region.
With reference to a semiconductor diode, define the potential barrier.
What is meant by forward biasing of a semiconductor diode?
