Advertisements
Advertisements
प्रश्न
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
Advertisements
उत्तर
Because of heavy doping, a very thin (<10−6 m) depletion region is formed between the p and n sides, and hence, the electric field of the junction is extremely high (~5 × 106 V/m) even for a small reverse bias voltage of about 5V.
APPEARS IN
संबंधित प्रश्न
Explain the working of P-N junction diode in forward and reverse biased mode.
What happens when a forward bias is applied to a p-n junction?
Why is a zener diode considered as a special purpose semiconductor diode?
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.
In semiconductor physics, what is meant by:
(i) rectifier
(ii) an amplifier
(iii) an oscillator
On increasing the reverse biases voltage to a large value in a P – N junction diode-current
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
