Advertisements
Advertisements
Question
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
Advertisements
Solution
Because of heavy doping, a very thin (<10−6 m) depletion region is formed between the p and n sides, and hence, the electric field of the junction is extremely high (~5 × 106 V/m) even for a small reverse bias voltage of about 5V.
APPEARS IN
RELATED QUESTIONS
Explain the working of P-N junction diode in forward and reverse biased mode.
When a forward bias is applied to a p-n junction, it ______.
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
With reference to a semiconductor diode, what is meant by:
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region
With reference to Semiconductor Physics,
Name the diode that emits spontaneous radiation when forward biased.
Depletion layer in p - n junction diode consists of
On increasing the reverse biases voltage to a large value in a P – N junction diode-current
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?
Draw V-I characteristics of a p-n Junction diode.
