Advertisements
Advertisements
Question
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
Options
a and b
a, b and d
c and d
a, b, c and d
Advertisements
Solution
a, b, c and d
Explanation:
On account of the difference in concentration of charge carrier in the two sections of the P-N junction, the electrons from N-region diffuse through the junction into P-region and the hole from P-region diffuse into N-region.
Due to diffusion, the neutrality of both N and P-type semiconductor is disturbed, a layer of negatively charged ions appear near the junction in the P-crystal and a layer of positive ions appears near the junction in N-crystal. This layer is called the depletion layer.
The thickness of the depletion layer is 1 micron = 10-6 m.
Width of depletion layer ∞ 1/Dopping
Depletion is directly proportional to temperature.
Important point: The P-N junction diode is equivalent to the capacitor in which the depletion layer acts as a dielectric.
APPEARS IN
RELATED QUESTIONS
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
In the following diagram, is the junction diode forward biased or reverse biased ?
Plot a graph showing variation of current versus voltage for the material GaAs ?
Why is a zener diode considered as a special purpose semiconductor diode?
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
Diffusion in a p-n junction is due to ______.
We use alloys for making standard resistors because they have ____________.
Of the diodes shown in the following diagrams, which one is reverse biased?
The current through an ideal PN-junction shown in the following circuit diagram will be:
The drift current in a p-n junction is from the ______.
Avalanche breakdown is due to ______.
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
With reference to a semiconductor diode, define the depletion region.
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.
