Advertisements
Advertisements
Question
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
Options
a and b
a, b and d
c and d
a, b, c and d
Advertisements
Solution
a, b, c and d
Explanation:
On account of the difference in concentration of charge carrier in the two sections of the P-N junction, the electrons from N-region diffuse through the junction into P-region and the hole from P-region diffuse into N-region.

Due to diffusion, the neutrality of both N and P-type semiconductor is disturbed, a layer of negatively charged ions appear near the junction in the P-crystal and a layer of positive ions appears near the junction in N-crystal. This layer is called the depletion layer.
The thickness of the depletion layer is 1 micron = 10-6 m.
Width of depletion layer ∞ 1/Dopping
Depletion is directly proportional to temperature.
Important point: The P-N junction diode is equivalent to the capacitor in which the depletion layer acts as a dielectric.
APPEARS IN
RELATED QUESTIONS
Explain the working of P-N junction diode in forward and reverse biased mode.
Show on a graph, the variation of resistivity with temperature for a typical semiconductor.
Why is a zener diode considered as a special purpose semiconductor diode?
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
We use alloys for making standard resistors because they have ____________.
What are the applications of p - n Junction diode?
Of the diodes shown in the following diagrams, which one is reverse biased?
In forward bias width of potential barrier in a p + n junction diode
In a semiconductor diode, the barrier potential offers opposition to only
Avalanche breakdown is due to ______.
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.

The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
![]() (a) |
![]() (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer
| ‘A’ | ‘B’ | ‘C’ |
![]() |
![]() |
![]() |
What is meant by forward biasing of a semiconductor diode?
An ideal PN junction diode offers ______.





