English
Karnataka Board PUCPUC Science 2nd PUC Class 12

When a forward bias is applied to a p-n junction, it ______.

Advertisements
Advertisements

Question

When a forward bias is applied to a p-n junction, it ______.

Options

  • raises the potential barrier.

  • reduces the majority carrier current to zero.

  • lowers the potential barrier.

  • None of the above.

MCQ
Fill in the Blanks
Advertisements

Solution

When a forward bias is applied to a p-n junction, it lowers the potential barrier.

Explanation:

When a forward bias is applied to a p-n junction, it lowers the value of potential barrier. In the case of a forward bias, the potential barrier opposes the applied voltage. Hence, the potential barrier across the junction gets reduced.

shaalaa.com
  Is there an error in this question or solution?
Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits - Exercise [Page 510]

APPEARS IN

NCERT Physics Part I and II [English] Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 5 | Page 510
NCERT Physics Part I and II [English] Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 14.5 | Page 467

Video TutorialsVIEW ALL [2]

RELATED QUESTIONS

Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.


With reference to semi-conductors answer the following : 

(i) What is the change in the resistance of the semi-conductor with increase in temperature ?

(ii) Name the majority charge carriers in n-type semi-conductor.

(iii) What is meant by doping ?


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?


Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.


In semiconductor physics, what is meant by: 
(i) rectifier
(ii) an amplifier
(iii) an oscillator


Diffusion in a p-n junction is due to ______.


Of the diodes shown in the following diagrams, which one is reverse biased?


The current through an ideal PN-junction shown in the following circuit diagram will be:


The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is


The expected energy of the electron at absolute zero is called:-


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.


If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?


Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


Draw V-I characteristics of a p-n Junction diode.


Answer the following giving reasons:

A p-n junction diode is damaged by a strong current.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


Describe the following term briefly: 

Minority carrier injection in forward biasing.


Choose the correct circuit which can achieve the bridge balance.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×