English
Karnataka Board PUCPUC Science Class 11

The Gain Factor of an Amplifier in Increased from 10 to 12 as the Load Resistance is Changed from 4 Kω to 8 Kω. Calculate (A) the Amplification Factor and (B) the Plate Resistance.

Advertisements
Advertisements

Question

The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.

Sum
Advertisements

Solution

We know:-

Voltage gain = \[\frac{\mu}{1 + \frac{r_p}{R_L}} ............(1)\]

When voltage amplification factor, A = 10,

RL = 4 kΩ

\[10 = \frac{\mu}{1 + \frac{r_p}{4 \times {10}^3}}\]

\[\Rightarrow 10=\frac{\mu \times 4 \times {10}^3}{4 \times {10}^3 + r_p}\]

\[ \Rightarrow 4 \times  {10}^4  + 10 r_P    =   4000  \mu .........(2)\]

Now, increased gain,  A = 12

Substituting this value in (1) ,we get:-

\[12 = \frac{\mu}{1 + \frac{r_P}{R_L}}\]

\[12 = \frac{\mu}{1 + \frac{r_p}{8 \times {10}^3}}\]

\[ \Rightarrow 12 = \frac{\mu \times 8000}{8000 + r_P}\]

\[ \Rightarrow 96000 + 12 r_P = 8000 \mu ...........(3)\]

On solving equations (2) and (3), we get:-

\[\mu   =   15\]

\[ r_P    =   2000   Ω  = 2  k\Omega\]

shaalaa.com
  Is there an error in this question or solution?
Chapter 41: Electric Current through Gases - Exercises [Page 354]

APPEARS IN

HC Verma Concepts of Physics Volume 1 and 2 [English]
Chapter 41 Electric Current through Gases
Exercises | Q 22 | Page 354

RELATED QUESTIONS

In the following diagram 'S' is a semiconductor. Would you increase or decrease the value of R to keep the reading of the ammeter A constant when S is heated? Give reason for your answer.


In the following diagram, is the junction diode forward biased or reverse biased ?


What is the use of Zener diode?


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


Why is a zener diode considered as a special purpose semiconductor diode?


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.


Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.


Diffusion in a p-n junction is due to ______.


We use alloys for making standard resistors because they have ____________.


What are the applications of p - n Junction diode?


A – pn junction has a depletion layer of thickness .of the order of


When we apply reverse biased to a junction diode, it


When an electric field is applied across a semiconductor ______.

  1. electrons move from lower energy level to higher energy level in the conduction band.
  2. electrons move from higher energy level to lower energy level in the conduction band.
  3. holes in the valence band move from higher energy level to lower energy level.
  4. holes in the valence band move from lower energy level to higher energy level.

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?


Explain the formation of the barrier potential in a p-n junction.


Describe the following term briefly: 

minority carrier injection in forward biasing.


Describe the following term briefly:

breakdown voltage in reverse biasing


Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×