Advertisements
Advertisements
Question
The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.
Advertisements
Solution
We know:-
Voltage gain = \[\frac{\mu}{1 + \frac{r_p}{R_L}} ............(1)\]
When voltage amplification factor, A = 10,
RL = 4 kΩ
\[10 = \frac{\mu}{1 + \frac{r_p}{4 \times {10}^3}}\]
\[\Rightarrow 10=\frac{\mu \times 4 \times {10}^3}{4 \times {10}^3 + r_p}\]
\[ \Rightarrow 4 \times {10}^4 + 10 r_P = 4000 \mu .........(2)\]
Now, increased gain, A = 12
Substituting this value in (1) ,we get:-
\[12 = \frac{\mu}{1 + \frac{r_P}{R_L}}\]
\[12 = \frac{\mu}{1 + \frac{r_p}{8 \times {10}^3}}\]
\[ \Rightarrow 12 = \frac{\mu \times 8000}{8000 + r_P}\]
\[ \Rightarrow 96000 + 12 r_P = 8000 \mu ...........(3)\]
On solving equations (2) and (3), we get:-
\[\mu = 15\]
\[ r_P = 2000 Ω = 2 k\Omega\]
APPEARS IN
RELATED QUESTIONS
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.
Show on a graph, the variation of resistivity with temperature for a typical semiconductor.
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
With reference to a semiconductor diode, what is meant by:
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region
We use alloys for making standard resistors because they have ____________.
The drift current in a p-n junction is from the ______.
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.

When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Draw V-I characteristics of a p-n Junction diode.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Describe briefly the following term:
minority carrier injection in forward biasing.
With reference to a semiconductor diode, define the depletion region.
