Advertisements
Advertisements
Questions
Describe the following term briefly:
Breakdown voltage in reverse biasing
Explain the following term:
Breakdown voltage in reverse bias
Advertisements
Solution
It is a critical reverse bias voltage at which the current is independent of the applied voltage.
APPEARS IN
RELATED QUESTIONS
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
Avalanche breakdown is due to ______.
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
Consider a box with three terminals on top of it as shown in figure (a):
 (a) |
Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).
 (b) |
The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are
(i) when A is positive and B is negative
 (c) |
(ii) when A is negative and B is positive
 (d) |
(iii) When B is negative and C is positive
|
(e) |
(iv) When B is positive and C is negative
 (f) |
(v) When A is positive and C is negative
 (g) |
(vi) When A is negative and C is positive
 (h) |
From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.
Differentiate between the threshold voltage and the breakdown voltage for a diode.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Describe the following term briefly:
Minority carrier injection in forward biasing.
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.
