Advertisements
Advertisements
प्रश्न
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
पर्याय
a and b
a, b and d
c and d
a, b, c and d
Advertisements
उत्तर
a, b, c and d
Explanation:
On account of the difference in concentration of charge carrier in the two sections of the P-N junction, the electrons from N-region diffuse through the junction into P-region and the hole from P-region diffuse into N-region.
Due to diffusion, the neutrality of both N and P-type semiconductor is disturbed, a layer of negatively charged ions appear near the junction in the P-crystal and a layer of positive ions appears near the junction in N-crystal. This layer is called the depletion layer.
The thickness of the depletion layer is 1 micron = 10-6 m.
Width of depletion layer ∞ 1/Dopping
Depletion is directly proportional to temperature.
Important point: The P-N junction diode is equivalent to the capacitor in which the depletion layer acts as a dielectric.
APPEARS IN
संबंधित प्रश्न
When a forward bias is applied to a p-n junction, it ______.
In the following diagram, is the junction diode forward biased or reverse biased ?
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.
With reference to a semiconductor diode, what is meant by:
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region
Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
We use alloys for making standard resistors because they have ____________.
A – pn junction has a depletion layer of thickness .of the order of
The expected energy of the electron at absolute zero is called:-
In a semiconductor diode, the barrier potential offers opposition to only
Avalanche breakdown is due to ______.
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?
Consider a box with three terminals on top of it as shown in figure (a):
 (a) |
Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).
 (b) |
The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are
(i) when A is positive and B is negative
 (c) |
(ii) when A is negative and B is positive
 (d) |
(iii) When B is negative and C is positive
|
(e) |
(iv) When B is positive and C is negative
 (f) |
(v) When A is positive and C is negative
 (g) |
(vi) When A is negative and C is positive
 (h) |
From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
Explain the formation of the barrier potential in a p-n junction.
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
Describe the following term briefly:
Breakdown voltage in reverse biasing
With reference to a semiconductor diode, define the potential barrier.
