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प्रश्न
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
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उत्तर
A strong current damages a p-n junction diode because it increases the semiconductor's temperature as more power passes through it and some of that energy is converted to heat. The semiconductor then conducts more current as the temperature rises a little further, which raises the temperature even further. Higher temperature results in more current, which increases the temperature. In what is referred to as a thermal runaway, this cycle keeps repeating. The semiconductor (p-n junction) is ultimately destroyed.
संबंधित प्रश्न
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
In the following diagram, is the junction diode forward biased or reverse biased ?
Diffusion in a p-n junction is due to ______.
On increasing the reverse biases voltage to a large value in a P – N junction diode-current
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.
Consider a box with three terminals on top of it as shown in figure (a):
 (a) |
Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).
 (b) |
The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are
(i) when A is positive and B is negative
 (c) |
(ii) when A is negative and B is positive
 (d) |
(iii) When B is negative and C is positive
|
(e) |
(iv) When B is positive and C is negative
 (f) |
(v) When A is positive and C is negative
 (g) |
(vi) When A is negative and C is positive
 (h) |
From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.
Describe briefly the following term:
minority carrier injection in forward biasing.
