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प्रश्न
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
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उत्तर
Because of heavy doping, a very thin (<10−6 m) depletion region is formed between the p and n sides, and hence, the electric field of the junction is extremely high (~5 × 106 V/m) even for a small reverse bias voltage of about 5V.
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संबंधित प्रश्न
Of the diodes shown in the following diagrams, which one is reverse biased?
A – pn junction has a depletion layer of thickness .of the order of
The expected energy of the electron at absolute zero is called:-
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.
Describe the following term briefly:
breakdown voltage in reverse biasing
An ideal PN junction diode offers ______.
