हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान 2nd PUC Class 12

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

Advertisements
Advertisements

प्रश्न

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

टिप्पणी लिखिए
Advertisements

उत्तर

We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.

On average the potential barrier in the P-N junction is ~0.5 V.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 14: Semiconductor Electronics - Exercises [पृष्ठ ९१]

APPEARS IN

एनसीईआरटी एक्झांप्लर Physics Exemplar [English] Class 12
अध्याय 14 Semiconductor Electronics
Exercises | Q 14.19 | पृष्ठ ९१

वीडियो ट्यूटोरियलVIEW ALL [2]

संबंधित प्रश्न

(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.


What is the use of Zener diode?


Why is a zener diode considered as a special purpose semiconductor diode?


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


Diffusion in a p-n junction is due to ______.


We use alloys for making standard resistors because they have ____________.


Of the diodes shown in the following diagrams, which one is reverse biased?


Use a transistor as an amplition


Avalanche breakdown is due to ______.


In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.


Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.


(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?

If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?


With reference to a semiconductor diode, define the depletion region.


With reference to a semiconductor diode, define the potential barrier.


An ideal PN junction diode offers ______.


A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×