Advertisements
Advertisements
प्रश्न
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?

Advertisements
उत्तर
According to the problem, forward biased resistance = 25 Ω and reverse biased resistance = ∞
As shown in the figure, the diode in branch CD is in reverse biased which has infinite resistance.
So, the current in that branch is zero, i.e. I3, = 0
Resistance in branch AB = 25 + 125 = 150 Ω say R1
Resistance in branch EF = 25 + 125 = 150 Ω, say R2
AB is parallel to EF
So, effective resistance
`1/R^' = 1/R_1 + 1/R_2 = 1/150 + 1/150 = 2/150`
⇒ R' 75 Ω
Total resistance R of the circuit = R' + 25 = 75 + 25 = 100 Ω
Current `I_1 = V/R = 5/100` = 0.05 A
According to Kirchhoff's, current law (KCL),
I1 = I4 + I2 + I3 .....(Here I3 = 0)
So I1 = I4 + I2
Here, the resistance R1 and R2 are same.
i.e., I4 = I2
∴ I1 = 2I2
⇒ `I_2 = I_1/2 = 0.05/2` = 0.025 A
And I4 = 0.025 A
Therefore, we get, I1 = 0.05 A, I2 = 0.025 A, I3 = 0 and I4 = 0.025 A.
APPEARS IN
संबंधित प्रश्न
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
What happens when a forward bias is applied to a p-n junction?
When a forward bias is applied to a p-n junction, it ______.
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
Why is a zener diode considered as a special purpose semiconductor diode?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.
Diffusion in a p-n junction is due to ______.
With reference to Semiconductor Physics,
Name the diode that emits spontaneous radiation when forward biased.
What are the applications of p - n Junction diode?
When we apply reverse biased to a junction diode, it
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In forward bias width of potential barrier in a p + n junction diode
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Describe the following term briefly:
Minority carrier injection in forward biasing.
With reference to a semiconductor diode, define the potential barrier.
