हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

The Plate Current in a Diode is 20 Ma When the Plate Voltage is 50 V Or 60 V. What Will Be the Current If the Plate Voltage is 70 V? - Physics

Advertisements
Advertisements

प्रश्न

The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?

टिप्पणी लिखिए
Advertisements

उत्तर

For 50 V or 60 V, the plate current is 20 mA. That means 20 mA is the saturation current.
At the given temperature, the plate current is 20 mA for all other values of voltages.

Thus, the current at 70 V will be 20 mA.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 19: Electric Current through Gases - Exercises [पृष्ठ ३५३]

APPEARS IN

एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 19 Electric Current through Gases
Exercises | Q 11 | पृष्ठ ३५३

संबंधित प्रश्न

In the following diagram, is the junction diode forward biased or reverse biased ?


With reference to semi-conductors answer the following : 

(i) What is the change in the resistance of the semi-conductor with increase in temperature ?

(ii) Name the majority charge carriers in n-type semi-conductor.

(iii) What is meant by doping ?


The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.


A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.


Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


Of the diodes shown in the following diagrams, which one is reverse biased?


The current through an ideal PN-junction shown in the following circuit diagram will be:


The drift current in a p-n junction is from the ______.


A – pn junction has a depletion layer of thickness .of the order of


When we apply reverse biased to a junction diode, it


Use a transistor as an amplition


In a semiconductor diode, the barrier potential offers opposition to only


In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.


In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.


Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


Draw V-I characteristics of a p-n Junction diode.


A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


Read the following paragraph and answer the questions that follow.

A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current.
  1. In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

    (a) 40 mA
    (b) 20 mA
    (c) 35 mA
    (d) 30 mA
  2. In which of the following figures, the pn diode is reverse biased?
    (a)

    (b)

    (c)

    (d)
  3. Based on the V-I characteristics of the diode, we can classify the diode as:
    (a) bilateral device
    (b) ohmic device
    (c) non-ohmic device
    (d) passive element
    OR
    Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

    (a) in the circuits (1) and (2)
    (b) in the circuits (2) and (3)
    (c) in the circuits (1) and (3)
    (d) only in the circuit (1)


  4. The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
    (a) 100
    (b) 106
    (c) 10
    (d) 10-6

Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×