Advertisements
Advertisements
प्रश्न
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.

विकल्प
1.3 V
2.3 V
0
0.5 V
Advertisements
उत्तर
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is 2.3 V.
Explanation:
Let us consider figure 2.3 V given above in the problem, suppose the potential difference between A and B is VAB.
Then, `V_(AB) - 0.3 = [(r_1 + r_2)10^3] xx (0.2 xx 10^-3)` .....[∵ VAB = ir]
= `[(5 + 5)10^3] xx (0.2 xx 10^-3)]`
= `10 xx 10^3 xx 0.2 xx 10^-3`
= 2
⇒ VAB = 2 + 0.3 = 2.3 V
APPEARS IN
संबंधित प्रश्न
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
When a forward bias is applied to a p-n junction, it ______.
Plot a graph showing variation of current versus voltage for the material GaAs ?
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The gain factor of an amplifier in increased from 10 to 12 as the load resistance is changed from 4 kΩ to 8 kΩ. Calculate (a) the amplification factor and (b) the plate resistance.
Diffusion in a p-n junction is due to ______.
What are the applications of p - n Junction diode?
The drift current in a p-n junction is from the ______.
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In forward bias width of potential barrier in a p + n junction diode
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?

In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Describe the following term briefly:
Minority carrier injection in forward biasing.
Describe the following term briefly:
Breakdown voltage in reverse biasing
With reference to a semiconductor diode, define the depletion region.
