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प्रश्न
Draw V-I characteristics of a p-n Junction diode.
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उत्तर
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संबंधित प्रश्न
Explain the working of P-N junction diode in forward and reverse biased mode.
When a forward bias is applied to a p-n junction, it ______.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
What are the applications of p - n Junction diode?
Depletion layer in p - n junction diode consists of
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In a semiconductor diode, the barrier potential offers opposition to only
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
