हिंदी

Explain the Working of P-n Junction Diode in Forward and Reverse Biased Mode

Advertisements
Advertisements

प्रश्न

Explain the working of P-N junction diode in forward and reverse biased mode.

Advertisements

उत्तर

If a germanium crystal or silicon crystal is doped during manufacture in such a way that half of it is p-type and other half is n-type, we get p-n junction.

(a) Forward biased: A battery is connected across p-n junction diode such that, p-type is connected to positive terminal and n-type is connected to negative terminal, then it is called forward biased. The potential difference applied should be more than 0.3 V for germanium and more than 0.7 V for silicon. Then holes from p-type region and electrons from n-type region moves towards barrier and it decreases width and height of
barrier. Hence an electric current flows through circuit. When applied potential is zero, then current also equal to zero. When P.D. Increases the current is also increases but very slowly. When applied P.D. is more than potential barrier, current in creases rapidly. This voltage is called knee voltage. The forward biased voltage at which the current through diode increases rapidly is called knee voltage

b) Reversed biased : A battery is connected across p-n junction diode such that, p-type is connected to negative terminal and n-type is connected to positive terminal, then it is called reversed biased. The holes from p type region and electrons from n-type region moves away from junction and it increases width and height of barrier. Hence there is no flow of an electric current in ideal case. In actual case current is very small (inμA) . The width of potential barrier increases and diode offer very high resistance. The very small current flows through circuit is called as reverse current. If reversed bias voltage increased then the kinetic energy of electrons increases. At certain reversed bias voltage the K.E. of electrons increases enough and they knock out the electrons from semiconductor atoms\ Therefore current suddenly increase. That certain reversed bias voltage is called as breakdown voltage. At breakdown voltage the current increases suddenly and destroy the junction permanently. The reversed bas voltage at which P-N junction breaks and current suddenly increases is called as breakdown voltage.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
2013-2014 (March)

APPEARS IN

वीडियो ट्यूटोरियलVIEW ALL [2]

संबंधित प्रश्न

What happens when a forward bias is applied to a p-n junction?


Draw its I – V characteristics of photodiode


In the following diagram, is the junction diode forward biased or reverse biased ?


Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.


Plot a graph showing variation of current versus voltage for the material GaAs ?


The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.


Why is a zener diode considered as a special purpose semiconductor diode?


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.


With reference to Semiconductor Physics,

Name the diode that emits spontaneous radiation when forward biased.


Of the diodes shown in the following diagrams, which one is reverse biased?


In forward bias width of potential barrier in a p + n junction diode


Use a transistor as an amplition


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


Avalanche breakdown is due to ______.


When an electric field is applied across a semiconductor ______.

  1. electrons move from lower energy level to higher energy level in the conduction band.
  2. electrons move from higher energy level to lower energy level in the conduction band.
  3. holes in the valence band move from higher energy level to lower energy level.
  4. holes in the valence band move from lower energy level to higher energy level.

Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

  1. Electrons crossover from emitter to collector.
  2. Holes move from base to collector.
  3. Electrons move from emitter to base.
  4. Electrons from emitter move out of base without going to the collector.

In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?



(a)

(b)
  1. Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
  2. What does the point P in figure (A) represent?
  3. What does the points P and Q in figure (B) represent?

If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?


Differentiate between the threshold voltage and the breakdown voltage for a diode.


Explain the formation of the barrier potential in a p-n junction.


Answer the following giving reasons:

A p-n junction diode is damaged by a strong current.


Describe the following term briefly: 

Minority carrier injection in forward biasing.


Describe the following term briefly:

Breakdown voltage in reverse biasing


An ideal PN junction diode offers ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×