Advertisements
Advertisements
प्रश्न
Explain the working of P-N junction diode in forward and reverse biased mode.
Advertisements
उत्तर
If a germanium crystal or silicon crystal is doped during manufacture in such a way that half of it is p-type and other half is n-type, we get p-n junction.

(a) Forward biased: A battery is connected across p-n junction diode such that, p-type is connected to positive terminal and n-type is connected to negative terminal, then it is called forward biased. The potential difference applied should be more than 0.3 V for germanium and more than 0.7 V for silicon. Then holes from p-type region and electrons from n-type region moves towards barrier and it decreases width and height of
barrier. Hence an electric current flows through circuit. When applied potential is zero, then current also equal to zero. When P.D. Increases the current is also increases but very slowly. When applied P.D. is more than potential barrier, current in creases rapidly. This voltage is called knee voltage. The forward biased voltage at which the current through diode increases rapidly is called knee voltage
b) Reversed biased : A battery is connected across p-n junction diode such that, p-type is connected to negative terminal and n-type is connected to positive terminal, then it is called reversed biased. The holes from p type region and electrons from n-type region moves away from junction and it increases width and height of barrier. Hence there is no flow of an electric current in ideal case. In actual case current is very small (inμA) . The width of potential barrier increases and diode offer very high resistance. The very small current flows through circuit is called as reverse current. If reversed bias voltage increased then the kinetic energy of electrons increases. At certain reversed bias voltage the K.E. of electrons increases enough and they knock out the electrons from semiconductor atoms\ Therefore current suddenly increase. That certain reversed bias voltage is called as breakdown voltage. At breakdown voltage the current increases suddenly and destroy the junction permanently. The reversed bas voltage at which P-N junction breaks and current suddenly increases is called as breakdown voltage.
APPEARS IN
संबंधित प्रश्न
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.
The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.

Why is a zener diode considered as a special purpose semiconductor diode?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
With reference to Semiconductor Physics,
Name the diode that emits spontaneous radiation when forward biased.
What are the applications of p - n Junction diode?
The drift current in a p-n junction is from the ______.
A – pn junction has a depletion layer of thickness .of the order of
When we apply reverse biased to a junction diode, it
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In forward bias width of potential barrier in a p + n junction diode
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.

Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
![]() (a) |
![]() (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

Differentiate between the threshold voltage and the breakdown voltage for a diode.
Explain the formation of the barrier potential in a p-n junction.
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
Describe briefly the following term:
minority carrier injection in forward biasing.
Read the following paragraph and answer the questions that follow.
| A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current. |
- In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

(a) 40 mA
(b) 20 mA
(c) 35 mA
(d) 30 mA - In which of the following figures, the pn diode is reverse biased?
(a)
(b)
(c)
(d)
- Based on the V-I characteristics of the diode, we can classify the diode as:
(a) bilateral device
(b) ohmic device
(c) non-ohmic device
(d) passive element
OR
Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:
(a) in the circuits (1) and (2)


(b) in the circuits (2) and (3)
(c) in the circuits (1) and (3)
(d) only in the circuit (1) 
The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
(a) 100
(b) 106
(c) 10
(d) 10-6
With reference to a semiconductor diode, define the depletion region.
What is meant by forward biasing of a semiconductor diode?


