Advertisements
Advertisements
प्रश्न
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Advertisements
उत्तर
Amplification factor for a triode valve,
\[\mu = \frac{\text{Change in Plate Voltage}}{\text{Change in Grid Voltage}}\]
At constant plate current,
\[\mu = \left(\frac{\delta V_P}{\delta V_G}\right)_{i_P = constant} \]
\[\mu = \frac{250 - 225}{2 . 5 - 0 . 5}\]
\[\mu = \frac{25}{2} = 12 . 5\]
This implies that the amplification factor of the triode is 12.5
APPEARS IN
संबंधित प्रश्न
What happens when a forward bias is applied to a p-n junction?
Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Diffusion in a p-n junction is due to ______.
Of the diodes shown in the following diagrams, which one is reverse biased?
A – pn junction has a depletion layer of thickness .of the order of
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
Avalanche breakdown is due to ______.
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.
