Advertisements
Advertisements
प्रश्न
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Advertisements
उत्तर
Amplification factor for a triode valve,
\[\mu = \frac{\text{Change in Plate Voltage}}{\text{Change in Grid Voltage}}\]
At constant plate current,
\[\mu = \left(\frac{\delta V_P}{\delta V_G}\right)_{i_P = constant} \]
\[\mu = \frac{250 - 225}{2 . 5 - 0 . 5}\]
\[\mu = \frac{25}{2} = 12 . 5\]
This implies that the amplification factor of the triode is 12.5
APPEARS IN
संबंधित प्रश्न
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Explain the working of P-N junction diode in forward and reverse biased mode.
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
Draw its I – V characteristics of photodiode
What is the use of Zener diode?
Show on a graph, the variation of resistivity with temperature for a typical semiconductor.
Why is a zener diode considered as a special purpose semiconductor diode?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
With reference to semi-conductors answer the following :
(i) What is the change in the resistance of the semi-conductor with increase in temperature ?
(ii) Name the majority charge carriers in n-type semi-conductor.
(iii) What is meant by doping ?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The current through an ideal PN-junction shown in the following circuit diagram will be:
The drift current in a p-n junction is from the ______.
A – pn junction has a depletion layer of thickness .of the order of
The expected energy of the electron at absolute zero is called:-
Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?
At Vi = 0.4 V, transistor is in active state.
At Vi = 1 V, it can be used as an amplifier.
At Vi = 0.5 V, it can be used as a switch turned off.
At Vi = 2.5 V, it can be used as a switch turned on.
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.
Explain the formation of the barrier potential in a p-n junction.
