Advertisements
Advertisements
प्रश्न
Explain the formation of the barrier potential in a p-n junction.
Advertisements
उत्तर
A p-n junction is formed by bringing p-type and n-type semiconductors together in very close proximity.
At the instant of p-n-junction, movement of free electrons from the n-side and free holes from the p-side diffuse across the junction and combine and thus leave -ve ions on the p-side and +ve ions inn-side.
These two layers of +ve and -ve ions form the depletion region and the potential difference thus sets up is called the potential barrier.

संबंधित प्रश्न
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In a semiconductor diode, the barrier potential offers opposition to only
Avalanche breakdown is due to ______.
Differentiate between the threshold voltage and the breakdown voltage for a diode.
When the p-side and n-side are joined, in which direction do electrons diffuse?
What opposes further diffusion in the depletion layer?
What is the approximate cut-in voltage of a germanium diode?
Which practical effect is associated with forward bias?
Which practical effect is associated with reverse bias before breakdown?
