Advertisements
Advertisements
प्रश्न
Explain the formation of the barrier potential in a p-n junction.
Advertisements
उत्तर
A p-n junction is formed by bringing p-type and n-type semiconductors together in very close proximity.
At the instant of p-n-junction, movement of free electrons from the n-side and free holes from the p-side diffuse across the junction and combine and thus leave -ve ions on the p-side and +ve ions inn-side.
These two layers of +ve and -ve ions form the depletion region and the potential difference thus sets up is called the potential barrier.
संबंधित प्रश्न
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
When we apply reverse biased to a junction diode, it
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
What is meant by forward biasing of a semiconductor diode?
An ideal PN junction diode offers ______.
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.
