Advertisements
Advertisements
प्रश्न
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.
Advertisements
उत्तर
According to the problem, Vi = 10 V, Resistance, RB = 400 kΩ, VBE = 0, VCE = 0 and RC = 3 kΩ
`V_i - V_(BE) = R_BI_B`
`I_B = ("Voltage across" R_B)/R_B`
= `10/(400 xx 10^3)`
= `25 xx 10^-6` A
= 25 μA
Voltage across RC = 10 V
`V_(CC) - V_(CE) = I_CR_C`
`I_C = ("Voltage across" R_C)/R_C`
= `10/(3 xx 10^3)`
= `3.33 xx 10^-3` A
= 3.33 mA
β = `I_C/I_B`
= `(3.33 xx 10^-3)/(25 xx 10^-6)`
= `1.33 xx 10^2`
= 133
APPEARS IN
संबंधित प्रश्न
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Explain the working of P-N junction diode in forward and reverse biased mode.
What happens when a forward bias is applied to a p-n junction?
When a forward bias is applied to a p-n junction, it ______.
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
A triode value operates at Vp = 225 V and Vg = −0.5 V.
The plate current remains unchanged if the plate voltage is increased to 250 V and the grid voltage is decreased to −2.5 V. Calculate the amplification factor.
Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
Diffusion in a p-n junction is due to ______.
The current through an ideal PN-junction shown in the following circuit diagram will be:
The drift current in a p-n junction is from the ______.
When we apply reverse biased to a junction diode, it
Avalanche breakdown is due to ______.
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
 (a) |
 (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Read the following paragraph and answer the questions that follow.
| A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current. |
- In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:
(a) 40 mA
(b) 20 mA
(c) 35 mA
(d) 30 mA - In which of the following figures, the pn diode is reverse biased?
(a)
(b)
(c)
(d)
- Based on the V-I characteristics of the diode, we can classify the diode as:
(a) bilateral device
(b) ohmic device
(c) non-ohmic device
(d) passive element
OR
Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:
(a) in the circuits (1) and (2)
(b) in the circuits (2) and (3)
(c) in the circuits (1) and (3)
(d) only in the circuit (1) 
The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
(a) 100
(b) 106
(c) 10
(d) 10-6
With reference to a semiconductor diode, define the depletion region.
Choose the correct circuit which can achieve the bridge balance.
