Advertisements
Advertisements
Question
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Advertisements
Solution
According to the problem, Vi = 10 V, Resistance, RB = 400 kΩ, VBE = 0, VCE = 0 and RC = 3 kΩ
`V_i - V_(BE) = R_BI_B`
`I_B = ("Voltage across" R_B)/R_B`
= `10/(400 xx 10^3)`
= `25 xx 10^-6` A
= 25 μA
Voltage across RC = 10 V
`V_(CC) - V_(CE) = I_CR_C`
`I_C = ("Voltage across" R_C)/R_C`
= `10/(3 xx 10^3)`
= `3.33 xx 10^-3` A
= 3.33 mA
β = `I_C/I_B`
= `(3.33 xx 10^-3)/(25 xx 10^-6)`
= `1.33 xx 10^2`
= 133
APPEARS IN
RELATED QUESTIONS
Explain the working of P-N junction diode in forward and reverse biased mode.
Plot a graph showing variation of current versus voltage for the material GaAs ?
The graph shown in the figure represents a plot of current versus voltage for a given semiconductor. Identify the region, if any, over which the semiconductor has a negative resistance.

A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
Depletion layer in p - n junction diode consists of
When we apply reverse biased to a junction diode, it
Use a transistor as an amplition
In a semiconductor diode, the barrier potential offers opposition to only
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?

Draw V-I characteristics of a p-n Junction diode.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.
Describe the following term briefly:
Breakdown voltage in reverse biasing
With reference to a semiconductor diode, define the potential barrier.
Choose the correct circuit which can achieve the bridge balance.
