Advertisements
Advertisements
प्रश्न
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
Advertisements
उत्तर
Given:-
Plate resistance,
`r_p=10kOmega=10^4Omega`
Change in plate voltage,
`deltaV_p=220-200=20V`
Plate resistance at constant grid voltage is given as:-
\[r_P = \left(\frac{\delta V_P}{\delta I_P}\right)_{V_G = Constant} \]
\[ \Rightarrow \delta I_P = \frac{\delta V_P}{r_P}\]
\[\delta I_P = \frac{\delta V_p}{r_P}\]
\[\delta I_P = \frac{20}{{10}^4} = 0 . 002 A = 2\text{ mA}\]
APPEARS IN
संबंधित प्रश्न
Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.
Diffusion in a p-n junction is due to ______.
Depletion layer in p - n junction diode consists of
The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is
In forward bias width of potential barrier in a p + n junction diode
Use a transistor as an amplition
The expected energy of the electron at absolute zero is called:-
Avalanche breakdown is due to ______.
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.
The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer
| ‘A’ | ‘B’ | ‘C’ |
 |
 |
 |
Draw V-I characteristics of a p-n Junction diode.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
What is meant by forward biasing of a semiconductor diode?
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.
Choose the correct circuit which can achieve the bridge balance.
