हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

In a Photo Diode, the Conductive Increases When the Material is Exposed to Light. It is Found that the Conductivity Changes Only If the Wavelength is Less than 620 Nm. What is the Band Gap?

Advertisements
Advertisements

प्रश्न

In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)

टिप्पणी लिखिए
Advertisements

उत्तर

Conductivity of any material increases when the number of free charge carriers in the material increases. When a photo diode is exposed to light, additional electron hole pairs are created  in the diode; thus, its conductivity increases. So to change the conductivity of a photo diode, the minimum energy of the incident radiation should be equal to the band gap of the material.
In other words,
Band gap = Energy of the incident radiation

\[\Rightarrow E = \frac{hc}{\lambda}\] 

\[ \Rightarrow E = \frac{1242  \text{ eV - nm}}{620  \text{ nm }}   =   2.0eV\]

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 9 | पृष्ठ ४१९

संबंधित प्रश्न

Draw its I – V characteristics of photodiode


In the following diagram, is the junction diode forward biased or reverse biased ?


What is the use of Zener diode?


Draw a labelled diagram of a full wave rectifier. Show how output voltage varies with time if the input voltage is a sinusoidal voltage.


Plot a graph showing variation of current versus voltage for the material GaAs ?


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?


A – pn junction has a depletion layer of thickness .of the order of


When we apply reverse biased to a junction diode, it


The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is


Figure shows the transfer characteristics of a base biased CE transistor. Which of the following statements are true?

At Vi = 0.4 V, transistor is in active state.

At Vi = 1 V, it can be used as an amplifier.

At Vi = 0.5 V, it can be used as a switch turned off.

At Vi = 2.5 V, it can be used as a switch turned on.


If each diode in figure has a forward bias resistance of 25 Ω and infinite resistance in reverse bias, what will be the values of the current I1, I2, I3 and I4?


Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


Draw V-I characteristics of a p-n Junction diode.


Explain the formation of the barrier potential in a p-n junction.


Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.


With reference to a semiconductor diode, define the potential barrier.


A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×