Advertisements
Advertisements
Question
A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?

Advertisements
Solution
According to the problem, power = 1 W
Zener breakdown voltage, Vz = 5 V
Minimum voltage, Vmin = 3 V
Maximum voltage, Vmax = 7 V
We know, P = VI
So, current `I_(Z_("max")) = P/V_Z = 1/5` = 0.2 A
For safe operation Rs will be equal to `R_S = (V_("max") - V_Z)/I_(Z_("max"))`
= `(7 - 5)/0.2`
= `2/0.2`
= 10 Ω
APPEARS IN
RELATED QUESTIONS
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.
Explain the working of P-N junction diode in forward and reverse biased mode.
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
Find the values of rp, µ and gm of a triode operating at plate voltage 200 V and grid voltage −6. The plate characteristics are shown in the figure.

With reference to a semiconductor diode, what is meant by:
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region
We use alloys for making standard resistors because they have ____________.
The drift current in a p-n junction is from the ______.
Use a transistor as an amplition
Avalanche breakdown is due to ______.
In the depletion region of a diode ______.
- there are no mobile charges.
- equal number of holes and electrons exist, making the region neutral.
- recombination of holes and electrons has taken place.
- immobile charged ions exist.
In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.

Differentiate between the threshold voltage and the breakdown voltage for a diode.
Explain the formation of the barrier potential in a p-n junction.
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
A semiconductor device is connected in series with a battery, an ammeter and a resistor. A current flows in the circuit. If. the polarity of the battery is reversed, the current in the circuit almost becomes zero. The device is a/an ______.
Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.
A full wave rectifier circuit diodes (D1) and (D2) is shown in the figure. If input supply voltage Vin = 220 sin (100 πt) volt, then at t = 15 ms.

Choose the correct circuit which can achieve the bridge balance.
