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प्रश्न
In a p-type semiconductos, which of the following statement is true:
पर्याय
Electrons are majority carriers and trivalent atoms are the dopants.
Electrons are minority carriers and pentavalent atoms are the dopants.
Holes are minority carriers and pentavalent atoms are the dopants.
Holes are majority carriers and trivalent atoms are the dopants.
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उत्तर
Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
In a p-type semiconductor, the holes are the majority carriers, while the electrons are the minority carriers. A p-type semiconductor is obtained when trivalent atoms, such as aluminium, are doped in silicon atoms.
संबंधित प्रश्न
In a p-type semiconductor, the acceptor impurity produces an energy level ______
A donor impurity results in ______.
In p-type semiconductor, the dopant is ______.
Distinguish between n-type and p-type semiconductors.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
The conductivity of a semiconductor increases with increase in temperature because ______.
Why are elemental dopants for Silicon or Germanium usually chosen from group XIII or group XV?
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?
The majority charge carriers in a P-type semiconductor are ______.
