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प्रश्न
In a p-type semiconductos, which of the following statement is true:
पर्याय
Electrons are majority carriers and trivalent atoms are the dopants.
Electrons are minority carriers and pentavalent atoms are the dopants.
Holes are minority carriers and pentavalent atoms are the dopants.
Holes are majority carriers and trivalent atoms are the dopants.
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उत्तर
Holes are majority carriers and trivalent atoms are the dopants.
Explanation:
In a p-type semiconductor, the holes are the majority carriers, while the electrons are the minority carriers. A p-type semiconductor is obtained when trivalent atoms, such as aluminium, are doped in silicon atoms.
संबंधित प्रश्न
Distinguish between 'intrinsic' and 'extrinsic' semiconductors
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
Electronic configuration of germanium is 2, 8, 18 and 4. To make it extrinsic semiconductor small quantity of antimony is added. The correct statement is ____________.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In p-type semiconductor, ______.
In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so formed.
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
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Identify the extrinsic semiconductors so formed.
Name the extrinsic semiconductors formed when pure germanium is doped with a trivalent impurity. Draw the energy band diagram of extrinsic semiconductors so formed.
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
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- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
The majority charge carriers in a P-type semiconductor are ______.
