Advertisements
Advertisements
Diffusion current in a p-n junction is greater than the drift current in magnitude
Concept: undefined >> undefined
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
Concept: undefined >> undefined
Advertisements
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
Concept: undefined >> undefined
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
Concept: undefined >> undefined
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
Concept: undefined >> undefined
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
Concept: undefined >> undefined
A current of 1.0 A is established in a tightly wound solenoid of radius 2 cm having 1000 turns/metre. Find the magnetic energy stored in each metre of the solenoid.
Concept: undefined >> undefined
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
Concept: undefined >> undefined
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
Concept: undefined >> undefined
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
Concept: undefined >> undefined
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
Concept: undefined >> undefined
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Concept: undefined >> undefined
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Concept: undefined >> undefined
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Concept: undefined >> undefined
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Concept: undefined >> undefined
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Concept: undefined >> undefined
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Concept: undefined >> undefined
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Concept: undefined >> undefined
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Concept: undefined >> undefined
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Concept: undefined >> undefined
